Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
نویسندگان
چکیده
منابع مشابه
Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the mo...
متن کاملSpin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions.
We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-...
متن کاملBias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers.
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias volta...
متن کاملThermoelectricity and disorder of FeCo/MgO/FeCo magnetic tunnel junctions
We compute the thermoelectric transport parameterized by the Seebeck coefficient and thermal/electric conductance of random-alloy FeCo/MgO/FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-Büttiker formalism. The thermopower is found to be typically smaller than those of Fe/MgO/Fe(001) MTJs. The (magneto-)Seebeck effect is sensitive to the details of ...
متن کاملSuperparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode
MgO-based magnetic tunnel junctions have been fabricated with a thin Co40Fe40B20 CoFeB layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. An inverted tunneling magnetoresistance is observed due to the unbalanced synthetic antiferromagnet. Superparamagnetic nanoparticles form when the CoFeB layer is thinner than 1.5 nm, and an abnormal temperature dependence of the junction res...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Magnetism and Magnetic Materials
سال: 2009
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2008.08.088